inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1692 description collector?emitter sustaining voltage : v ceo(sus) = 100v(min.) dc current gain : h fe = 2000(min.) @ i c = 1.5 a complement to type 2sb1149 applications designed for general-purpose amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 150 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 8 v i c collector current-continuous 3 a i cm collector current-peak 5 a collector power dissipation t a =25 1.3 p c collector power dissipation t c =25 15 w t i junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1692 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 3a; i b = 3ma, l= 1.0mh b 100 v v ce (sat) collector-emitter saturation voltage i c = 1.5a; i b = 1.5ma 1.2 v v be (sat) base-emitter saturation voltage i c = 1.5a; i b = 1.5ma 2.0 v i cbo collector cutoff current v cb = 100v ; i e = 0 10 a i ceo collector cutoff current v ce = 100v; r be = 1.0 ma h fe-1 dc current gain i c = 1.5 a; v ce = 2v 2000 20000 h fe-2 dc current gain i c = 3 a; v ce = 2v 1000 switching times t on turn-on time 0.5 s t stg storage time 2.0 s t f fall time i c = 1.5a, i b1 = -i b2 = 1.5ma; r l = 27 ; v cc 40v 1.0 s ? h fe- 1 classifications m l k 2000-5000 4000-12000 8000-20000 isc website www.iscsemi.cn
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